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Magnetron Sputter Chamber
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D shape, 304 stainless steel chamber with viewport
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Vacuum Pumping
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Turbo pump and rough pump
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Vacuum Valve
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Pneumatic operation high vacuum and isolation gate valves
Chamber Vent Valve, Rough and Foreline angle valve, and gas valve
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| Vacuum Gauging |
Wide range vacuum gauge and Pirani rough gauge
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Sputtering Sources |
up to six circle magnetron sputtering sources
Each source with Pneumatic shutter
The power supply can be DC, pulse DC or RF power supply
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Sample Stage
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Substrate Z lift motion, rotating, and the sample heating, bias for up to 4” substrate with Pneumatic substrate shutter
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| Pressure Control |
Four Mass flow controller
Capacitance manometer for sputter process pressure control
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Cooled Water Interlock
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There are cooled water flow sensors of interlock to protect sputter sources work properly
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The Base Vacuum Pressure in Sputter Chamber
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better than 5E-8 Torr
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Sample Loading Capacity
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Max. 4 inch flat substrate
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The Max. Temperature of the Sample Heater
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1000C degree
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The film uniformity
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better than +/-3% over a rotating 4 inch Silicon wafer
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General Sputtering Pressure
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1-50 mTorr
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Evaporation Chamber
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D shape, 304 stainless steel chamber with viewport
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Vacuum Pumping
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Turbo pump and rough pump
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Vacuum Valve
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Pneumatic operation high vacuum and isolation gate valves
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| Vacuum Gauging |
Wide range vacuum gauge and Pirani rough gauge
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Evaporation Sources |
One 6 x 7cc rotary e-beam evaporation source
Source with Pneumatic shutter
With high voltage power supply and beam sweep controller
Three high temperature/OLED source for metal or OLED evaporation
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Sample Stage
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Substrate Z lift motion, rotating, and the sample heating, for up to 4” substrate with Pneumatic substrate shutter
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| Thin Film Monitor and Control | Inficon Thin Film Deposition Rate/Thickness monitor/control |
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Cooled Water Interlock
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There are cooled water flow sensors of interlock to protect e-beam sources work properly
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The Base Vacuum Pressure in Sputter Chamber
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better than 5E-8 Torr
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Sample Loading Capacity
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Max. 4 inch flat substrate
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The Max. Temperature of the Sample Heater
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600C
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The film uniformity
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better than +/-3% over a rotating 4 inch Silicon wafer
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Load Lock Chamber
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Base Vacuum Pressure is better than 5E-7 torr
Single or multi substrate loading stage
Auto sample transfer between three chamber
Option O2 reactive,
Option RF plasma cleaning,
Optional Heating of the substrate
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