Over View and Application
DE500 Magnetron Sputter with sputtering chamber of four sputter sources and one sample stage for loading the substrate up to
6” diameter, the sputter chamber base vacuum pressure is10-8 Torr, it can be used to sputter metals, semiconductor or
insulation materials, it also can sputter alloy film or multi layer film, especially it can be used to sputter very thin
film for some typical materials base on the very low sputter pressure, this is the ideal tools for thin film R&D for the university
and academy.
概述和○应用
DE500磁控溅射仪主要包括溅射腔体，4个溅射源和一个样品台可装载并溅射最大六英寸样品，系统极〓限真空度10-8托，可用于
溅射金属、半导体及介质「材料，可用于溅射合金及多层薄膜材料，特别的是可以维持很低的溅射气压因此可以溅射非常薄的膜层，
是大专院校和科研院所从事材料和薄膜研究的理▆想平台
Good Film Uniformity and repeatability
很好的薄膜均匀性和重复性
Safety interlock for critical components
关键部件△安全互锁保护
Configuration
主要配置
|
Magnetron Sputter Chamber 溅射真空腔室』 |
D shape, 304 stainless steel chamber with viewport 磁控溅射腔体为304不锈钢，并有观察窗 |
|
Vacuum Pumping 真空泵 |
Turbo pump and dry rough pump with sputter chamber 溅射室配备分子泵和＠ 无油机械泵 |
|
Vacuum Valve 真空阀门 |
Pneumatic operation high vacuum and isolation gate valves 气动控制高真空和隔∏离插板阀门 Chamber Vent Valve, Rough and Foreline angle valve, and gas valve 腔体充气阀门，粗抽和前级角【阀，气体◆截止阀 |
|
Sputtering Sources 溅射源 |
Four 4” circle magnetron sputtering sources 4个4英寸圆形磁控溅射源 Each source with Pneumatic shutter 每个源配备手动挡板 The power supply can be DC, pulse DC or RF power supply 电源可以配备直流，脉冲直流或射频电源 |
|
Sample Stage 样品台
|
Substrate linear motion, rotating, and the sample heating or water cooling, Up to 6” substrate with Pneumatic substrate shutte 样品台直线升降和旋转，样品可加热或冷却，最大6英寸基片装载能√力，配气动样品挡板 |
|
Vacuum Gauging 真空测量 |
Wide range vacuum gauge and Pirani rough gauge 宽量程真空计用于测量真空和皮拉尼粗抽计 |
|
Pressure Control 压力控制 |
Three Mass flow controller 三路流量计 Capacitance manometer for sputter process pressure control 一个压力计实现溅射压力控制 |
|
Cooled Water Interlock 冷水安全互锁 |
There are cooled water flow sensors of interlock to protect sputter sources work properly 溅射源⊙冷却水路配水流传感器对溅射源安全互々锁保护 |
|
Load Lock |
Option O2 reactive, RF plasma cleaning, single or multi substrate loading 可选, 通氧反应，射频等离子体清洗, 单基片或多基片装载能力 |
Specification
主要技术指标
|
Sputter Chamber Size 磁控溅射腔体尺寸 |
450mm wide x 430mm deep x 450mm high 450mm宽430mm深450mm高 |
|
The Base Vacuum Pressure in Sputter Chamber 溅射腔体极限真】空度 |
better than 5E-8 Torr 优于5E-8托 |
|
Sample Loading Capacity 装样能力 |
Max. 6 inch flat substrate 最大6英寸◥的平板基片 |
|
The Max. Temperature of the Sample Heater 样品加热器最高温度 |
1000C 1000度 |
|
The film uniformity 膜厚均匀性 |
better than +/-3% over a rotating 4 inch Silicon wafer 在旋转的4英寸硅基片上的膜厚均匀性由于+/-3% |
|
General Sputtering Pressure 通用溅射压力 |
1-5 mTorr 1至5毫托 |
