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                电子束感生电流分析系统EBIC

                电子束感生电流分析系统EBIC
                <
                • 电子束感生电流分析系统EBIC
                >
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                  尚丰科技向用户提供专业的的电子束感生电流分析系统EBIC

                  EBIC原理

                  当扫描电卐镜电子束作用于半导体器件时,如果电子束穿透半导体表面,电子束电子与器件材料晶格作用将产生电子与空穴。这些电子和空穴将能较为自由地运动,但如果该位置没有电场作用,它们将很快复合湮灭(发射阴极荧光),若该位置有电场作用(如晶体管或集成电路中的pn结),这些电子与空穴在电场作用下将相互分离。故一旦在pn结的耗尽层或其附近位置产生电子空穴对,空穴将向p型侧移动,电子将向n型侧移动,这样将有一灵敏放大器可检测到的电流通过结区。该电流即为电子束感生电流(EBIC)。由于pn结的耗尽层有多的多余载流子,故在电』场作用下的电子空穴分离会产生很高的电流值,而在其它的地方电流大小将受到扩散长度和扩散寿命的限制,故利用EBIC进行成像可以用来进行集成电路中pn结的定位和损伤研究。 

                  EBIC应用领域包括但不限于:

                  1)材料晶格缺陷探测分析,缺陷以黑点和黑线标识出来;

                  

                2)P-N结缺陷区域定位;

                3)双极电路中导致集电极-发射极漏电电流的收集管路的探测;

                4)探测额外连接或者多层掺杂;

                5)确定静电放电/电过载(ESD/EOS)导致的失效位置;

                6)测量减压层/耗尽层(depletion layer)宽度和少数载流子扩散长度和时间(minority carrier diffusion lengths/lifetimes)

                等等。

                EBIC图像对于电子-空穴的重新组合非常敏感,因此EBIC技术能够非常有效的对半导体材料缺陷等进行失◥效分析。


                  BenifitsMake the link between device characterization and materials properties

                • Image electrical activity across complete devices

                • Distinguish between electrically active and passive defects

                • Correlate electrical activity with composition (EDS) and crystallographic structure (EBSD)

                  Localise electrical defects with highest resolution

                • Enable sample preparation for TEM or atom probe microscopy

                • Avoid alignment errors by directly imaging defects with EBIC in FIB SEM

                • Use live EBIC imaging to stop milling during sample preparation

                  Map junctions and defects over large areas

                • Identify all electrically active defects

                • Map active areas of junctions and electrical fields

                • Validate doping profiles and areas

                  Export calibrated EBIC signal for analysis of materials properties

                • Measure defect contrast / recombination strength

                • Extract diffusion length of minority charge carriers

                • Determine width of depletion regions

                  Verify device operation modes with built-in biasing and live overlay

                • Image junctions and fields in delayered devices

                • Map electrical activity in solar cells under bias

                • Compare imaged behaviour with device modelling

                  Access third dimension with depth profiling

                • Manipulate depth of EBIC signal by changing kV in SEM

                • Investigate EBIC images of cross-sections in FIB-SEM

                • Export EBIC depth series for 3D reconstruction

                  FeaturesThe EBIC system is fully integrated and software controlled

                • Image acquisition and EBIC module are integrated into one software

                • All amplification and acquisition settings are software controlled

                • EBIC signal is automatically quantified and displayed in current values (μA, nA, pA)

                  The most sophisticated and easy to use EBIC amplifier

                • Two stage amplification for maximum gain range

                • Built in -10…+10V DC bias with current compensation

                • Beam current output for SEM feedback and integration

                  The most powerful and versatile SEM scanning system – DISS5

                • Integrated scan generator and image acquisition

                • Very large image resolution, up to 16k x 16k pixels

                • Very fast scanning speed, down to 200ns dwell time

                • Simultaneous 4x analogue and 12x digital counter inputs

                  Optional electrical sample holder for large area devices

                • Suitable for solar cells, photovoltaics and light emitting diodes

                • Flexible mount in plan-view or cross-section configuration

                • Includes Faraday cups for beam current measurements

                  Advanced controls are provided for calibration, biasing and scanning

                • Flexible pre-amplifier gain from as little as 10^3 to as high as 10^10 V/A

                • Further 0.1…100x gain and 100 μA compensation for optimum imaging

                • Electronics are optimised for high speed, providing 0.5 MHz at 10^9 V/A

                  Simultaneous signals are mixed live for correlative microscopy

                • Up to 4x simultaneous signals

                • 12-bit digitization with signal integration (oversampling)

                • Live colour mixing tool for visualisation

                  Current-voltage (IV) tool is integrated for contacts and nanoprobing

                • Voltage output maximum range is -10…+10 V

                • Gain selection for current measurements is automatic

                • IV may also be used for device characterisation

                  Configurable scan profiles enable custom workflows for efficient use

                • Fast EBIC scan profile for alignment and navigation

                • High resolution EBIC scan profile for mapping and analysis

                • Simultaneous SE/EBIC scan profile for localization

                  Live signal monitor assists image acquisition and calibration

                • Live line scan signals are displayed for optimisation

                • Multiple live signals are displayed simultaneously

                • The gradation graph improves display of complex shadows

                  Advanced live scan tool enables advanced beam control

                • Select points, lines or areas from pre-scan images

                • Set number of points, step size, binning and averaging

                • Generate single or multiple diagrams

                • Export diagrams and/or raw data

                  Gallery

                  尚丰科技致力于引进推广先进的材料、生物显微观测及微区分析仪器,向科研人员高附◥加值服务。我们拥有一支涉及众多领域高素质的应用支持团队,为各行业的应用需求提供专业的解决方案和售后服务。


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                       尚丰科技(香港)有限公司

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